A Comparative Study of Two Terminal GaN- based Gunn and IMPATT Devices as High Frequency Signal Generators
نویسنده
چکیده
The dynamic characteristics of GaN-based Gunn and IMPATTs are reported at same operating conditions to find out the potentiality of each device to use as high frequency signal generator. The general model is developed by the author’s group considering all the physical phenomena for both the devices. It is seen that Double Drift Region IMPATTs produce better microwave power compare to Gunn diode at the same operating conditions, particularly at W-band of operation.
منابع مشابه
A Comparative Study on the Effect of Optical Illumination on Si1-xGex and Si based DDR IMPATT Diodes at W-Band
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